STW80NE06-10 n - channel 60v - 0.0085 w - 80a - to-247 stripfet ? o power mosfet n typical r ds(on) = 0.0085 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique osingle feature size ? o strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n solenoid and relay drivers n motor control, audio amplifiers n dc-dc converters n automotive environment ? internal schematic diagram july 1998 1 2 3 to-247 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain- gate voltage (r gs =20k w ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c80a i d drain current (continuous) at t c =100 o c57a i dm ( ? ) drain current (pulsed) 320 a p tot total dissipation at t c =25 o c200w derating factor 1.33 w/ o c dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 80 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds(on) i d STW80NE06-10 60 v <0.01 w 80 a 1/8
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.75 30 0.1 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 80 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =30v) 350 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 60 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 234v r ds(on) static drain-source on resistance v gs =10v i d =40a 8.5 10 m w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =40 a 19 38 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 7600 890 150 10000 1100 200 pf pf pf STW80NE06-10 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =30v i d =40a r g =4.7 w v gs =10v (see test circuit, figure 3) 50 150 65 200 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =48v i d =80a v gs = 10 v 140 20 50 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =48v i d =40a r g =4.7 w v gs =10v (see test circuit, figure 5) 45 75 130 60 100 170 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 80 320 a a v sd ( * ) forward on voltage i sd =80a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100 a/ m s v dd =30v t j =150 o c (see test circuit, figure 5) 100 0.4 8 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STW80NE06-10 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STW80NE06-10 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STW80NE06-10 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STW80NE06-10 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data STW80NE06-10 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . STW80NE06-10 8/8
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